AutoCAD Crack+ Full Version Free Download For PC [Updated] 2022
AutoCAD Crack+ Full Version Free Download For PC [Updated] 2022
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Run the file "KeyGen" and press the "Generate" button. Update The Code Prosthesis might not be available in Autodesk 360, but you could download a free demo of it. 1. Field of the Invention This invention relates to a method of manufacturing a semiconductor device. This invention particularly relates to a method of manufacturing a semiconductor device comprising a flash memory having a flash memory cell in which data is electrically erased or programmed by FN tunneling. 2. Description of the Related Art Conventionally, flash memories have been used for a large capacity file memory, and recently flash memories are widely used for the memory of a portable electronic apparatus, such as a mobile phone and a notebook type personal computer. In recent years, flash memories have been used as an image data memory, for the purpose of miniaturizing, weight-lightening, and high-speed operation. In flash memories, the programming operation is performed to write or erase data electrically in units of a plurality of memory cells at the same time by a bulk erasing method. This bulk erasing method causes a substrate to carry a large current to break up oxygen or water molecules adsorbed on the substrate surface into hydrogen or oxygen ions. This is called an ashing operation. The substrate is heated by a heater of the flash memory to make the oxygen or water molecules adsorbed on the substrate surface carried into hydrogen or oxygen ions. This is called an ashing step. The heating source is provided in the substrate to carry out the ashing operation. The heating source is provided in the substrate to heat the substrate to carry out the ashing operation. In addition, there is a method of carrying out the programming and erasing operations by F-N tunneling. This is a so-called tunneling programming. In this tunneling programming method, a large electric field is applied to a thin oxide film to cause electrons to tunnel through the thin oxide film to thereby cause data to be written in a silicon substrate. This is called a Fowler-Nordheim (F-N) tunneling. An exemplary method of manufacturing a flash memory cell using the F-N tunneling will be described with reference to FIGS. 1A to 1D. A plurality of gate insulating films 100 are first formed over a silicon substrate 200, as shown in FIG. 1A. Then, a floating gate 102 is formed over the silicon substrate 200 and a control gate 104 is formed
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